Rydberg Energy Levels and Quantum Defects of some Semiconductor Elements

Authors

  • Ejaz Ahmed Hazara University, Mansehra, Pakistan
  • Jehan Akbar Hazara University, Mansehra, Pakistan

DOI:

https://doi.org/10.6000/1927-5129.2018.14.16

Keywords:

Weakest bound Electron Potential Model Theory, Rydberg Atoms, Rydberg energy levels, Boron, Silicon.

Abstract

Weakest bound Electron Potential Model Theory has turned out to be a successful theory in explaining many atomic properties, namely, energy levels, transition probabilities and oscillator strengths. The theory has also been used to calculate Rydberg energy levels and quantum defects. In this paper we studied semiconductor elements Boron and Silicon. We calculated energy levels of Rydberg atoms of Boron and Silicon up to n = 50 levels using WBEPMT. We also calculated quantum defects in principle quantum number for various configurations of these elements.

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Published

2018-01-05

How to Cite

Ejaz Ahmed, & Jehan Akbar. (2018). Rydberg Energy Levels and Quantum Defects of some Semiconductor Elements. Journal of Basic & Applied Sciences, 14, 113–118. https://doi.org/10.6000/1927-5129.2018.14.16

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Section

Physics